標題: Stability of High Performance p-type SnO TFTs
作者: Zhong, C. W.
Tsai, H. Y.
Lin, H. C.
Liu, K. C.
Huang, T. Y.
電機學院
電子工程學系及電子研究所
College of Electrical and Computer Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 2015
摘要: High performance p-type SnO TFTs were fabricated and characterized in this work. Owing to thermal oxygen annealing process, the originally tin-rich oxide film was transformed into a polycrystalline SnO, resulting in decent field-effect mobility and high on/off current ratio. Electrical stability was evaluated by examining the threshold voltage shift under negative bias stresses at different stress times. A scenario considering the passivation/de-passivation of acceptor defects in the channel and the hole trapping of the gate oxide is proposed to explain the observed instability of the SnO TFTs.
URI: http://hdl.handle.net/11536/136098
ISBN: 978-1-4799-9928-6
ISSN: 1946-1550
期刊: PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)
起始頁: 84
結束頁: 87
Appears in Collections:Conferences Paper