Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsieh, Wan-Lin | en_US |
dc.contributor.author | Lin, Chung-Kuang | en_US |
dc.contributor.author | Zhan, Chau-Jie | en_US |
dc.contributor.author | Huang, Yu-wei | en_US |
dc.contributor.author | Chen, Chih | en_US |
dc.date.accessioned | 2017-04-21T06:49:47Z | - |
dc.date.available | 2017-04-21T06:49:47Z | - |
dc.date.issued | 2015 | en_US |
dc.identifier.isbn | 978-1-4799-9928-6 | en_US |
dc.identifier.issn | 1946-1550 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/136103 | - |
dc.description.abstract | Theoretical calculation and simulation of FEM were proposed to explain the decline of change in resistance in Cu-Sn microbumps during the electromigration test. The IMC transformation from Cu6Sn5 to Cu3Sn was supposed to be the reason. Being aware that the dimension keeps shrinking, the behavior for various solder diameters was also investigated. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Bump Resistance Change Behavior due to Cu-Sn IMCs Formation with Various Solder Diameters | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015) | en_US |
dc.citation.spage | 362 | en_US |
dc.citation.epage | 365 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000380466200092 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |