標題: | Microstructure evolution during electromigration in eutectic SnPb solder bumps |
作者: | Lu, CM Shao, TL Yang, CJ Chen, C 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-八月-2004 |
摘要: | A technique has been developed to facilitate analysis of the microstructural evolution of solder bumps after current stressing. Eutectic SnPb solders were connected to under-bump metallization (UBM) of Ti/Cr-Cu/Cu and pad metallization of Cu/Ni/Au. It was found that the Cu6Sn5 compounds on the cathode/chip side dissolved after the current stressing by 5 x 10(3) A/cm(2) at 150 degreesC for 218 h. However, on the anode/chip side, they were transformed into (NixCu1-x)(3)Sn-4 in the center region of the UBM, and they were converted into (Cu-y,Ni1-y)(6)Sn-5 on the periphery of the UBM. For both cathode/substrate and anode/substrate ends, (Cu-y,Ni1-y)(6)Sn-5 compounds were transformed into (Ni-x,Cu1-x)(3)Sn-4. In addition, the bumps failed at cathode/chip end due to serious damage of the UBM and the Al pad. A failure mechanism induced by electromigration is proposed in this paper. |
URI: | http://dx.doi.org/10.1557/JMR.2004.0305 http://hdl.handle.net/11536/26525 |
ISSN: | 0884-2914 |
DOI: | 10.1557/JMR.2004.0305 |
期刊: | JOURNAL OF MATERIALS RESEARCH |
Volume: | 19 |
Issue: | 8 |
起始頁: | 2394 |
結束頁: | 2401 |
顯示於類別: | 期刊論文 |