Bump Resistance Change Behavior due to Cu-Sn IMCs Formation with Various Solder Diameters

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsieh, Wan-Lin	en_US
dc.contributor.author	Lin, Chung-Kuang	en_US
dc.contributor.author	Zhan, Chau-Jie	en_US
dc.contributor.author	Huang, Yu-wei	en_US
dc.contributor.author	Chen, Chih	en_US
dc.date.accessioned	2017-04-21T06:49:47Z	-
dc.date.available	2017-04-21T06:49:47Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4799-9928-6	en_US
dc.identifier.issn	1946-1550	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136103	-
dc.description.abstract	Theoretical calculation and simulation of FEM were proposed to explain the decline of change in resistance in Cu-Sn microbumps during the electromigration test. The IMC transformation from Cu6Sn5 to Cu3Sn was supposed to be the reason. Being aware that the dimension keeps shrinking, the behavior for various solder diameters was also investigated.	en_US
dc.language.iso	en_US	en_US
dc.title	Bump Resistance Change Behavior due to Cu-Sn IMCs Formation with Various Solder Diameters	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)	en_US
dc.citation.spage	362	en_US
dc.citation.epage	365	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000380466200092	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文