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dc.contributor.authorChang, Chih-Hsiangen_US
dc.contributor.authorLai, Yu-Chiaen_US
dc.contributor.authorFan, Yang-Shunen_US
dc.contributor.authorChang, Che-Chiaen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.date.accessioned2017-04-21T06:49:47Z-
dc.date.available2017-04-21T06:49:47Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-9928-6en_US
dc.identifier.issn1946-1550en_US
dc.identifier.urihttp://hdl.handle.net/11536/136105-
dc.description.abstractIn this study, we analyzed the In2O3 thin flints with different oxygen How rate during sputtering as the transistor\'s channel layer. The electrical analysis including device\'s reliability and material analysis were both examined.en_US
dc.language.isoen_USen_US
dc.titleStudy on Transparent Amorphous Indium Oxide Thin Film Transistors Technologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)en_US
dc.citation.spage374en_US
dc.citation.epage378en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000380466200095en_US
dc.citation.woscount0en_US
顯示於類別：會議論文


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