完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Tsai, CW | en_US |
dc.contributor.author | Lai, SC | en_US |
dc.contributor.author | Yen, CT | en_US |
dc.contributor.author | Lien, HM | en_US |
dc.contributor.author | Lung, HL | en_US |
dc.contributor.author | Wu, TB | en_US |
dc.contributor.author | Wang, TH | en_US |
dc.contributor.author | Liu, R | en_US |
dc.contributor.author | Lu, CY | en_US |
dc.date.accessioned | 2014-12-08T15:18:55Z | - |
dc.date.available | 2014-12-08T15:18:55Z | - |
dc.date.issued | 2005-06-01 | en_US |
dc.identifier.issn | 1530-4388 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TDMR.2005.846977 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13610 | - |
dc.description.abstract | Slow-switching effect in PZT ferroelectric memory under low-voltage and high-speed operation is observed. The slow-switching effect becomes worse at lower operation voltage and elevated temperature. This effect significantly reduces the sensing margin and causes severe reliability issue for advanced ferroelectric memory, particularly for low-voltage and high-speed applications. This slow-switching effect is believed to be attributed to slowing down of polarization switching caused by band bending from Schottky built-in potential at the electrode/ferroelectric interface. The proposed mechanism is supported by the polarity dependence in an asymmetric LNO/PZT/Pt sample. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | ferroelectric memory | en_US |
dc.subject | Schottky built-in potential | en_US |
dc.subject | slow-switching effect | en_US |
dc.title | Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-XTiX)O-3 ferroelectric memory | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1109/TDMR.2005.846977 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | en_US |
dc.citation.volume | 5 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 217 | en_US |
dc.citation.epage | 223 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000230223000009 | - |
顯示於類別: | 會議論文 |