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dc.contributor.authorFan, Yang-Shunen_US
dc.contributor.authorChan, Wei-Liangen_US
dc.contributor.authorChang, Chih-Hsiangen_US
dc.contributor.authorZheng, Guang-Tingen_US
dc.contributor.authorChang, Che-Chiaen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.date.accessioned2017-04-21T06:49:50Z-
dc.date.available2017-04-21T06:49:50Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-9928-6en_US
dc.identifier.issn1946-1550en_US
dc.identifier.urihttp://hdl.handle.net/11536/136111-
dc.description.abstractThe Al-doped zinc tin oxide based RRAM with nonlinearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting similar to 2nm Al2O3 tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.en_US
dc.language.isoen_USen_US
dc.titlePerformance and Reliability of Non-linear Al-Zn-Sn-O based Resistive Random Access Memoryen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)en_US
dc.citation.spage416en_US
dc.citation.epage419en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000380466200106en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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