Performance and Reliability of Non-linear Al-Zn-Sn-O based Resistive Random Access Memory

標題:	Performance and Reliability of Non-linear Al-Zn-Sn-O based Resistive Random Access Memory
作者:	Fan, Yang-Shun Chan, Wei-Liang Chang, Chih-Hsiang Zheng, Guang-Ting Chang, Che-Chia Liu, Po-Tsun 電子工程學系及電子研究所光電工程學系顯示科技研究所 Department of Electronics Engineering and Institute of Electronics Department of Photonics Institute of Display
公開日期:	2015
摘要:	The Al-doped zinc tin oxide based RRAM with nonlinearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting similar to 2nm Al2O3 tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.
URI:	http://hdl.handle.net/11536/136111
ISBN:	978-1-4799-9928-6
ISSN:	1946-1550
期刊:	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)
起始頁:	416
結束頁:	419
Appears in Collections:	Conferences Paper