Performance and Reliability of Non-linear Al-Zn-Sn-O based Resistive Random Access Memory

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Fan, Yang-Shun	en_US
dc.contributor.author	Chan, Wei-Liang	en_US
dc.contributor.author	Chang, Chih-Hsiang	en_US
dc.contributor.author	Zheng, Guang-Ting	en_US
dc.contributor.author	Chang, Che-Chia	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.date.accessioned	2017-04-21T06:49:50Z	-
dc.date.available	2017-04-21T06:49:50Z	-
dc.date.issued	2015	en_US
dc.identifier.isbn	978-1-4799-9928-6	en_US
dc.identifier.issn	1946-1550	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136111	-
dc.description.abstract	The Al-doped zinc tin oxide based RRAM with nonlinearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting similar to 2nm Al2O3 tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.	en_US
dc.language.iso	en_US	en_US
dc.title	Performance and Reliability of Non-linear Al-Zn-Sn-O based Resistive Random Access Memory	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)	en_US
dc.citation.spage	416	en_US
dc.citation.epage	419	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000380466200106	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文