Grain Size Effect of Monolayer MoS2 Transistors Characterized by Second Harmonic Generation Mapping

Title:	Grain Size Effect of Monolayer MoS2 Transistors Characterized by Second Harmonic Generation Mapping
Authors:	Lin, Chih-Pin Lyu, Li-Syuan Lin, Ching-Ting Liu, Pang-Shiuan Chang, Wen-Hao Li, Lain-Jong Hou, Tuo-Hung 電子物理學系電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics
Issue Date:	2015
Abstract:	We investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.
URI:	http://hdl.handle.net/11536/136114
ISBN:	978-1-4799-9928-6
ISSN:	1946-1550
Journal:	PROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)
Begin Page:	476
End Page:	479
Appears in Collections:	Conferences Paper