1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorLin, Chih-Pinen_US
dc.contributor.authorLyu, Li-Syuanen_US
dc.contributor.authorLin, Ching-Tingen_US
dc.contributor.authorLiu, Pang-Shiuanen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.date.accessioned2017-04-21T06:49:50Z-
dc.date.available2017-04-21T06:49:50Z-
dc.date.issued2015en_US
dc.identifier.isbn978-1-4799-9928-6en_US
dc.identifier.issn1946-1550en_US
dc.identifier.urihttp://hdl.handle.net/11536/136114-
dc.description.abstractWe investigated different CVD-synthesized MoS2 films, aiming to correlate the device characteristics with the grain size. The grain size of MoS2 can be precisely characterized through nondestructive second harmonic generation mapping based on the degree of inversion symmetry. The devices with larger grains at the channel region show improved on/off current ratio, which can be explained by the less carrier scattering caused by the grain boundaries.en_US
dc.language.isoen_USen_US
dc.titleGrain Size Effect of Monolayer MoS2 Transistors Characterized by Second Harmonic Generation Mappingen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE 22ND INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA 2015)en_US
dc.citation.spage476en_US
dc.citation.epage479en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000380466200121en_US
dc.citation.woscount2en_US
Appears in Collections:Conferences Paper


Related Contents
Loading...