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dc.contributor.authorHong, Kuo-Binen_US
dc.contributor.authorChen, Chih-Chenen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2017-04-21T06:49:15Z-
dc.date.available2017-04-21T06:49:15Z-
dc.date.issued2014en_US
dc.identifier.isbn978-1-4799-5721-7en_US
dc.identifier.issn2326-5442en_US
dc.identifier.urihttp://dx.doi.org/10.1109/ISLC.2014.24en_US
dc.identifier.urihttp://hdl.handle.net/11536/136129-
dc.description.abstractGaN-based photonic quasicrystal surface emitting lasers operated at different Gamma modes were realized. Experimental results revealed that the lower order mode has the lower threshold energy density, which can help develop low threshold PQCSELs.en_US
dc.language.isoen_USen_US
dc.titleHigher order mode analysis of GaN-based photonic quasicrystal surface emitting lasersen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/ISLC.2014.24en_US
dc.identifier.journal2014 24TH IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC 2014)en_US
dc.citation.spage181en_US
dc.citation.epage182en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000369990800091en_US
dc.citation.woscount0en_US
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