標題: Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns
作者: Huang, Hung-Wen
Lin, Chung-Hsiang
Huang, Zhi-Kai
Lee, Kang-Yuan
Yu, Chang-Chin
Kuo, Hao-Chung
光電工程學系
Department of Photonics
關鍵字: Gallium nitride (GaN);light-emitting diodes (LEDs);nanoimprint lithography (NIL);photonic quasi-crystal (PQC)
公開日期: 1-十一月-2009
摘要: The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on a transistor-outline-can package, the light output power of an LED with a nanohole patterned sapphire substrate (NHPSS) and an LED with a double PQC structure are enhanced by 34% and 61%, compared with the conventional LED. In addition, the higher output power of the LED with the double PQC structure is due to better reflectance on NHPSS and higher scattering effect on p-GaN surface using a 12-fold PQC structure pattern. These results provide promising potential to increase the output powers of commercial light-emitting devices.
URI: http://dx.doi.org/10.1109/LED.2009.2029985
http://hdl.handle.net/11536/6491
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2029985
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 11
起始頁: 1152
結束頁: 1154
顯示於類別:期刊論文


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