標題: | Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns |
作者: | Huang, Hung-Wen Lin, Chung-Hsiang Huang, Zhi-Kai Lee, Kang-Yuan Yu, Chang-Chin Kuo, Hao-Chung 光電工程學系 Department of Photonics |
關鍵字: | Gallium nitride (GaN);light-emitting diodes (LEDs);nanoimprint lithography (NIL);photonic quasi-crystal (PQC) |
公開日期: | 1-十一月-2009 |
摘要: | The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on a transistor-outline-can package, the light output power of an LED with a nanohole patterned sapphire substrate (NHPSS) and an LED with a double PQC structure are enhanced by 34% and 61%, compared with the conventional LED. In addition, the higher output power of the LED with the double PQC structure is due to better reflectance on NHPSS and higher scattering effect on p-GaN surface using a 12-fold PQC structure pattern. These results provide promising potential to increase the output powers of commercial light-emitting devices. |
URI: | http://dx.doi.org/10.1109/LED.2009.2029985 http://hdl.handle.net/11536/6491 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2009.2029985 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 30 |
Issue: | 11 |
起始頁: | 1152 |
結束頁: | 1154 |
顯示於類別: | 期刊論文 |