標題: Efficiency Improvement of GaN-Based LEDs With a SiO2 Nanorod Array and a Patterned Sapphire Substrate
作者: Huang, H. W.
Huang, J. K.
Lin, C. H.
Lee, K. Y.
Hsu, H. W.
Yu, C. C.
Kuo, H. C.
光電工程研究所
Institute of EO Enginerring
關鍵字: Gallium nitride (GaN);light-emitting diodes (LEDs);nanoimprint lithography (NIL);patterned sapphire substrate (PSS)
公開日期: 1-六月-2010
摘要: The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a patterned sapphire substrate (PSS) and a SiO2 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on transistor-outline-can package, the light output powers of LED with a PSS and LED with a PSS and a SiO2 PQC structure are enhanced by 35% and 48%, compared with the conventional LED. In addition, the higher output power of the LED with a PSS and a SiO2 PQC structure is due to better reflectance on PSS and higher epitaxial quality on an n-GaN using a SiO2 12-fold PQC structure pattern. These results provide promising potential to increase output powers of commercial light-emitting devices.
URI: http://dx.doi.org/10.1109/LED.2010.2045472
http://hdl.handle.net/11536/150152
ISSN: 0741-3106
DOI: 10.1109/LED.2010.2045472
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 31
起始頁: 582
結束頁: 584
顯示於類別:期刊論文