標題: A Low Operating Voltage IGZO TFT Using LaLuO3 Gate Dielectric
作者: Chou, Kun-I
Hsu, Hsiao-Hsuan
Cheng, Chun-Hu
Lee, Kai-Yu
Li, Shang-Rong
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: thin film transistor (TFT);InGaZnO;LaLuO3
公開日期: 2013
摘要: This study proposes a low operation voltage indium-gallium-zinc oxide (IGZO) thin-film transistor using a high-kappa lanthanum-lutetium oxide as the gate dielectric. It is the first time to integrate the high-kappa LaLuO3 into an IGZO TFT. The resulting LaLuO3/IGZO TFT shows a low threshold voltage of 0.32 V, a small sub-threshold swing of 310 mV/decade and an acceptable mobility (mu(FE)) of 6.6 cm(2)/V-s. The low V-T and small SS allow device operation voltage below 2.5 V.
URI: http://hdl.handle.net/11536/136156
ISBN: 978-1-4673-2523-3
期刊: 2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
顯示於類別:會議論文