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dc.contributor.authorChang, Shih-Pangen_US
dc.contributor.authorLai, Yung-Yuen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorHan, Jungen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLin, Chien-chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2017-04-21T06:49:14Z-
dc.date.available2017-04-21T06:49:14Z-
dc.date.issued2014en_US
dc.identifier.issn2160-9020en_US
dc.identifier.urihttp://hdl.handle.net/11536/136162-
dc.description.abstractWe report a self-assembled InN epitaxial growth on GaN nanorods. Crystalline InN hexagonal structure was selectively grown on the sidewall edges of GaN hexagonal nanorods. The growth mechanism and the photoluminescent property will be discussed.en_US
dc.language.isoen_USen_US
dc.titleSelf-assembled InN growth on GaN nanoroden_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000369908601273en_US
dc.citation.woscount0en_US
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