標題: | Current Uniformity Improvement in Flexible Resistive Memory |
作者: | Zheng, Zhi-Wei Cheng, Chun-Hu Chou, Kun-I Liu, Ming Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | resistive memory;flexible;nitrogen-rich TaN |
公開日期: | 2013 |
摘要: | High uniform current distribution, good endurance, and low 28 mu W switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices on flexible polyimide substrate. The good performances are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. The present results demonstrate that the device with nitrogen-rich TaN electrode has a strong potential for future low-cost high-performance flexible memory application. |
URI: | http://hdl.handle.net/11536/136164 |
ISBN: | 978-1-4673-2523-3 |
期刊: | 2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) |
顯示於類別: | 會議論文 |