標題: Current Uniformity Improvement in Flexible Resistive Memory
作者: Zheng, Zhi-Wei
Cheng, Chun-Hu
Chou, Kun-I
Liu, Ming
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: resistive memory;flexible;nitrogen-rich TaN
公開日期: 2013
摘要: High uniform current distribution, good endurance, and low 28 mu W switching power are successfully achieved in Ni/GeOx/TiOy/TaN resistive random access memory devices on flexible polyimide substrate. The good performances are attributed to the nitrogen-rich TaN to increase the oxidation resistance and decrease the TaON and oxygen vacancies formation from x-ray photoelectron spectroscopy measurements, where such oxygen vacancies are related to current conduction at high resistance state. The present results demonstrate that the device with nitrogen-rich TaN electrode has a strong potential for future low-cost high-performance flexible memory application.
URI: http://hdl.handle.net/11536/136164
ISBN: 978-1-4673-2523-3
期刊: 2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)
顯示於類別:會議論文