標題: Investigation and Benchmark of Intrinsic Drain-Induced-Barrier-Lowering (DIBL) for Ultra-Thin-Body III-V-on-Insulator n-MOSFETs
作者: Yu, Chang-Hung
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ultra-thin-body (UTB) structure;III-V;drain-induced-barrier-lowering (DIBL);quantum confinement
公開日期: 2015
摘要: The intrinsic drain-induced-barrier-lowering (DIBL) characteristics of ultra-thin-body (UTB) MOSFETs with various III-V channel materials (such as GaAs, In0.53Ga0.47As, In0.7Ga0.3As, InAs, In0.2Ga0.8Sb, InSb, etc.) has been investigated and benchmarked with the Si device. Our results indicate that the DIBL of the III-V-on-insulator devices can be worse than what permittivity predicts. The underlying mechanism is proposed. We also show that, with the aid of quantum confinement (along the channel-thickness direction), the DIBL of the III-V devices can be comparable to the Si device.
URI: http://hdl.handle.net/11536/136214
ISBN: 978-1-4673-8155-0
期刊: 2015 IEEE 15TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)
起始頁: 666
結束頁: 669
顯示於類別:會議論文