標題: The Nitrogen Incorporated ZrO2 Charge Trapping Layers in Nonvolatile Memory Applications
作者: Lin, Chih Ju
Lee, Ming Ling
Chang, Kow Ming
Chang, Shan Wei
Chen, Hsiang
Kao, Chyuan Haur
Sung, Wei Kung
Kuo, Min Hau
Chang, Che Wei
Chang, Chia Lun
Lin, Chun Fu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2014
摘要: In the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900 degrees C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.
URI: http://hdl.handle.net/11536/136233
ISBN: 978-1-4799-3282-5
期刊: 2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
Appears in Collections:Conferences Paper