標題: | Upper critical field of granular SnGe samples near the superconductor-to-insulator transition |
作者: | Lin, PJ Hsu, SY 電子物理學系 Department of Electrophysics |
公開日期: | 1-六月-2005 |
摘要: | We have measured the upper critical field, H-c2(T), in granular SnGe samples with normal state resistivities, rho(N), that range from 0.3 m Omega cm to 0.5 Omega cm. The samples demonstrate an evolution from superconducting to insulating in transport with increasing disorder. The temperature dependence of H-c2 shows a clear change in curvature between high rho(N) and intermediate rho(N) samples differing from the experimental results by Deutscher et al.. Our data is analyzed in terms of Ginzburg-Landau theory and grain structure induced disorder effect. The result is similar to the observation in high T-c superconductors that anisotropy induced fluctuation effect play an important role. |
URI: | http://hdl.handle.net/11536/13626 |
ISSN: | 0577-9073 |
期刊: | CHINESE JOURNAL OF PHYSICS |
Volume: | 43 |
Issue: | 3 |
起始頁: | 662 |
結束頁: | 665 |
顯示於類別: | 會議論文 |