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dc.contributor.authorChi, Kai-Lunen_US
dc.contributor.authorChen, Xin-Nanen_US
dc.contributor.authorYen, Jia-Liangen_US
dc.contributor.authorLin, Weien_US
dc.contributor.authorChiu, Shi-Weien_US
dc.contributor.authorChen, Jason (Jyehong)en_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorYang, Ying-Jayen_US
dc.contributor.authorShi, Jin-Weien_US
dc.date.accessioned2017-04-21T06:49:36Z-
dc.date.available2017-04-21T06:49:36Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-9435-8007-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/136280-
dc.description.abstractBy using p-type modulation doping in the highly strained MQWs of high-speed 850 nm VCSELs, significant enhancements in speed, slope efficiency, and maximum power have been simultaneously achieved as compared to those of un-doped referencesen_US
dc.language.isoen_USen_US
dc.titleStrong Enhancements in Static/Dynamic Performances of High-Speed 850 nm Vertical-Cavity Surface-Emitting Lasers with P-type delta-Doping in Highly Strained Active Layersen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXHIBITION (OFC)en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000382938100389en_US
dc.citation.woscount0en_US
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