標題: | Power Conditioning Applications of 700V GaN-HEMTs Cascode Switch |
作者: | Cheng, Stone Chou, Po-Chien 機械工程學系 Department of Mechanical Engineering |
關鍵字: | GaN-HEMT;Cascode structure;Slant T-gate |
公開日期: | 2015 |
摘要: | A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) cascoded with an integrated power MOSFET and a Schottky barrier diode. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 700 V. Analysis of 200 V/ 1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC Schottky barrier diode are also demonstrated. Finally, a flyback AC-DC converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit. |
URI: | http://hdl.handle.net/11536/136311 |
ISBN: | 978-1-4799-1762-4 |
ISSN: | 1553-572X |
期刊: | IECON 2015 - 41ST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY |
起始頁: | 4796 |
結束頁: | 4801 |
顯示於類別: | 會議論文 |