標題: Power Conditioning Applications of 700V GaN-HEMTs Cascode Switch
作者: Cheng, Stone
Chou, Po-Chien
機械工程學系
Department of Mechanical Engineering
關鍵字: GaN-HEMT;Cascode structure;Slant T-gate
公開日期: 2015
摘要: A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT) cascoded with an integrated power MOSFET and a Schottky barrier diode. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 700 V. Analysis of 200 V/ 1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC Schottky barrier diode are also demonstrated. Finally, a flyback AC-DC converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.
URI: http://hdl.handle.net/11536/136311
ISBN: 978-1-4799-1762-4
ISSN: 1553-572X
期刊: IECON 2015 - 41ST ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY
起始頁: 4796
結束頁: 4801
Appears in Collections:Conferences Paper