完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, WZ | en_US |
dc.contributor.author | Cheng, YL | en_US |
dc.contributor.author | Lin, DS | en_US |
dc.date.accessioned | 2014-12-08T15:18:59Z | - |
dc.date.available | 2014-12-08T15:18:59Z | - |
dc.date.issued | 2005-06-01 | en_US |
dc.identifier.issn | 0018-9200 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/JSSC.2005.845970 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13632 | - |
dc.description.abstract | A fully integrated 10-Gb/s optical receiver analog front-end (AFE) design that includes a transimpedance amplifier (TIA) and a limiting amplifier (LA) is demonstrated to require less chip area and is suitable for both low-cost and low-voltage applications. The AFE is fabricated using a 0.18-mu m CMOS technology. The tiny photo current received by the receiver AFE is amplified to a differential voltage swing of 400 mV((pp)). In order to avoid off-chip noise interference, the TIA and LA are dc-coupled on the chip instead of ac-coupled though a large external capacitor. The receiver front-end provides a conversion gain of up to 87 dB Omega and -3 dB bandwidth of 7.6 GHz. The measured sensitivity of the optical receiver is -12 dBm at a bit-error rate of 10(-12) with a 2(31) -1 pseudorandom test pattern. Three-dimensional symmetric transformers are utilized in the AFE design for bandwidth enhancement. Operating under a 1.8-V supply, the power dissipation is 210 mW, and the chip size is 1028 mu m x 1796 mu m. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | limiting amplifier | en_US |
dc.subject | optical receiver | en_US |
dc.subject | three-dimensional symmetric transformer | en_US |
dc.subject | transimpedance amplifier | en_US |
dc.title | A 1.8-V 10-Gb/s fully integrated CMOS optical receiver analog front-end | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/JSSC.2005.845970 | en_US |
dc.identifier.journal | IEEE JOURNAL OF SOLID-STATE CIRCUITS | en_US |
dc.citation.volume | 40 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.spage | 1388 | en_US |
dc.citation.epage | 1396 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000229447900019 | - |
dc.citation.woscount | 49 | - |
顯示於類別: | 期刊論文 |