1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorLiu, Pang-Shiuanen_US
dc.contributor.authorChen, Chang-Hsiaoen_US
dc.contributor.authorHsu, Wei-Tingen_US
dc.contributor.authorLin, Chih-Pinen_US
dc.contributor.authorLin, Tzu-Pingen_US
dc.contributor.authorChi, Li-Jenen_US
dc.contributor.authorChang, Chao-Yuanen_US
dc.contributor.authorWu, Shih-Chiehen_US
dc.contributor.authorChang, Wen-Haoen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.date.accessioned2017-04-21T06:49:14Z-
dc.date.available2017-04-21T06:49:14Z-
dc.date.issued2014en_US
dc.identifier.isbn978-1-4799-8000-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/136384-
dc.description.abstractP-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 mu s has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.en_US
dc.language.isoen_USen_US
dc.titleFast Visible-Light Phototransistor Using CVD-Synthesized Large-Area Bilayer WSe2en_US
dc.typeProceedings Paperen_US
dc.identifier.journal2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000370384800030en_US
dc.citation.woscount0en_US
顯示於類別：會議論文


相關內容
Loading...