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dc.contributor.authorLin, CPen_US
dc.contributor.authorTsui, BYen_US
dc.date.accessioned2014-12-08T15:18:59Z-
dc.date.available2014-12-08T15:18:59Z-
dc.date.issued2005-06-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2005.848096en_US
dc.identifier.urihttp://hdl.handle.net/11536/13640-
dc.description.abstractHigh-performance p-channel modified Schottky-barrier SOI FinFETs (MSB pFinFETs) with low temperature source/drain annealing process was recently suggested for future nano-scale devices. In this letter, the hot-carrier (HC) immunity of the MSB pFinFETs with different gate lengths (L-g) and fin widths (W-f) are presented. The experimental data shows that the MSB pFinFET with narrower W-f has less hot carrier degradation than that with wider W-f. The effects of electrical field in Si fins induced from lateral-gate electrode and the degree of uniformity of source/drain extension are illustrated cautiously by two-dimensional simulation and transmission electron microscopy (TEM) micrographs, respectively. It is found that the devices with narrower W-f have weaker electrical field from gate electrode and better uniformity of source/drain extension resulting in superior hot-carrier immunity. The projected operation voltage at ten years dc lifetime exceeds 1.6 V as the W-f is narrower than 60 nm. It is thus concluded that the MSB pFinFET would be a very promising nano device.en_US
dc.language.isoen_USen_US
dc.subjectFinFETen_US
dc.subjecthot carrieren_US
dc.subjectSchottky-barrier (SB)en_US
dc.subjectsilicon-on-insulator (SOI)en_US
dc.titleHot-carrier effects in p-channel modified Schottky-barrier FinFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2005.848096en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume26en_US
dc.citation.issue6en_US
dc.citation.spage394en_US
dc.citation.epage396en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000229522000017-
dc.citation.woscount12-
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