標題: Effect of Formation Temperature on Quality of Gate Dielectric on Germanium Substrate
作者: Wei, Erh-Jye
Tsui, Bing-Yue
Wu, Pin-Jiun
加速器光源科技與應用學位學程
電子工程學系及電子研究所
Master and Ph.D. Program for Science and Technology of Accelrrator Light Source
Department of Electronics Engineering and Institute of Electronics
公開日期: 2016
摘要: Germanium metal-insulator-semiconductor (MIS) structure with HfO2/Al2O3/GeO2 gate stack have been demonstrated to exhibit good performance. In this work, the effect of formation temperature of the gate stack on the quality of the gate dielectric is investigated. It is found that the higher plasma oxidation temperature helps the GeO2 formation and less interface states. But the higher deposition temperature of the ALD high-k films may degrade the interface and result in higher leakage current.
URI: http://hdl.handle.net/11536/136411
ISBN: 978-1-4673-8258-8
ISSN: 1946-1550
期刊: Proceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
起始頁: 252
結束頁: 255
顯示於類別:會議論文