Full metadata record
DC FieldValueLanguage
dc.contributor.authorWei, Erh-Jyeen_US
dc.contributor.authorTsui, Bing-Yueen_US
dc.contributor.authorWu, Pin-Jiunen_US
dc.date.accessioned2017-04-21T06:49:06Z-
dc.date.available2017-04-21T06:49:06Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-4673-8258-8en_US
dc.identifier.issn1946-1550en_US
dc.identifier.urihttp://hdl.handle.net/11536/136411-
dc.description.abstractGermanium metal-insulator-semiconductor (MIS) structure with HfO2/Al2O3/GeO2 gate stack have been demonstrated to exhibit good performance. In this work, the effect of formation temperature of the gate stack on the quality of the gate dielectric is investigated. It is found that the higher plasma oxidation temperature helps the GeO2 formation and less interface states. But the higher deposition temperature of the ALD high-k films may degrade the interface and result in higher leakage current.en_US
dc.language.isoen_USen_US
dc.titleEffect of Formation Temperature on Quality of Gate Dielectric on Germanium Substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.journalProceedings of the 2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)en_US
dc.citation.spage252en_US
dc.citation.epage255en_US
dc.contributor.department加速器光源科技與應用學位學程zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentMaster and Ph.D. Program for Science and Technology of Accelrrator Light Sourceen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000389243200060en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper