1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorCheng, Chuan-Anen_US
dc.contributor.authorHuang, Yu-Hsiangen_US
dc.contributor.authorLin, Chicn-Hungen_US
dc.contributor.authorLee, Chia-Linen_US
dc.contributor.authorYang, Shan-Chunen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2017-04-21T06:49:09Z-
dc.date.available2017-04-21T06:49:09Z-
dc.date.issued2016en_US
dc.identifier.isbn978-1-4673-9478-9en_US
dc.identifier.issn1930-8868en_US
dc.identifier.urihttp://hdl.handle.net/11536/136423-
dc.description.abstractA submicron photolysis polymer temporary bonding with ultra-fast laser de-bonding process of less than 20 s has been demonstrated where both photolysis polymer and polyimide are served as release layer and adhesive layer, respectively. In addition, the bonded structure provides high chemical resistance and mechanical strength for handling process. By measuring the electrical characteristics of devices before and after de-bond, it shows promising performance without degradation. Thus it can be a potential candidate for temporary bonding and de-bonding in 3D integration.en_US
dc.language.isoen_USen_US
dc.titleWafer-Level MOSFET with Submicron Photolysis Polymer Temporary Bonding Technology Using Ultra-Fast Laser Ablation for 3DIC Applicationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000389022000018en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


Related Contents
Loading...