Wafer-Level MOSFET with Submicron Photolysis Polymer Temporary Bonding Technology Using Ultra-Fast Laser Ablation for 3DIC Application

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Cheng, Chuan-An	en_US
dc.contributor.author	Huang, Yu-Hsiang	en_US
dc.contributor.author	Lin, Chicn-Hung	en_US
dc.contributor.author	Lee, Chia-Lin	en_US
dc.contributor.author	Yang, Shan-Chun	en_US
dc.contributor.author	Chen, Kuan-Neng	en_US
dc.date.accessioned	2017-04-21T06:49:09Z	-
dc.date.available	2017-04-21T06:49:09Z	-
dc.date.issued	2016	en_US
dc.identifier.isbn	978-1-4673-9478-9	en_US
dc.identifier.issn	1930-8868	en_US
dc.identifier.uri	http://hdl.handle.net/11536/136423	-
dc.description.abstract	A submicron photolysis polymer temporary bonding with ultra-fast laser de-bonding process of less than 20 s has been demonstrated where both photolysis polymer and polyimide are served as release layer and adhesive layer, respectively. In addition, the bonded structure provides high chemical resistance and mechanical strength for handling process. By measuring the electrical characteristics of devices before and after de-bond, it shows promising performance without degradation. Thus it can be a potential candidate for temporary bonding and de-bonding in 3D integration.	en_US
dc.language.iso	en_US	en_US
dc.title	Wafer-Level MOSFET with Submicron Photolysis Polymer Temporary Bonding Technology Using Ultra-Fast Laser Ablation for 3DIC Application	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2016 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000389022000018	en_US
dc.citation.woscount	0	en_US
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