完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Luo, Zhicong | en_US |
dc.contributor.author | Ker, Ming-Dou | en_US |
dc.date.accessioned | 2017-04-21T06:48:21Z | - |
dc.date.available | 2017-04-21T06:48:21Z | - |
dc.date.issued | 2016 | en_US |
dc.identifier.isbn | 978-1-4673-8900-6 | en_US |
dc.identifier.issn | 2472-467X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/136454 | - |
dc.description.abstract | A new high-voltage-tolerant level shifter is proposed and verified in a 0.18-mu m CMOS process with 1.8-V/3.3-V devices, whereas the operation voltage can be up to 12V. The output signal of high-voltage-tolerant level shifter has an offset of 3 times the normal supply voltage (V-DD) of the used technology with respect to the input signal. The converting speed of level shifter is improved by using the coupling capacitors and the cross-coupled transistor pairs. Electrical overstress and the gate-oxide reliability issues can be fully eliminated because all transistors in the proposed level shifter are operating within the safe voltage range. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Design of High-Voltage-Tolerant Level Shifter in Low Voltage CMOS Process for Neuro Stimulator | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2016 14TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS) | en_US |
dc.contributor.department | 生醫電子轉譯研究中心 | zh_TW |
dc.contributor.department | Biomedical Electronics Translational Research Center | en_US |
dc.identifier.wosnumber | WOS:000386900400038 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |