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dc.contributor.authorLai, Y-Cen_US
dc.contributor.authorRafailov, P. M.en_US
dc.contributor.authorVlaikova, E.en_US
dc.contributor.authorMarinova, V.en_US
dc.contributor.authorLin, S. H.en_US
dc.contributor.authorYu, P.en_US
dc.contributor.authorYu, S. -Cen_US
dc.contributor.authorChi, G. C.en_US
dc.contributor.authorDimitrov, D.en_US
dc.contributor.authorSveshtarov, P.en_US
dc.contributor.authorMehandjiev, V.en_US
dc.contributor.authorGospodinov, M. M.en_US
dc.date.accessioned2019-04-03T06:47:27Z-
dc.date.available2019-04-03T06:47:27Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn1742-6588en_US
dc.identifier.urihttp://dx.doi.org/10.1088/1742-6596/682/1/012009en_US
dc.identifier.urihttp://hdl.handle.net/11536/136484-
dc.description.abstractSingle-layer graphene films were grown by chemical vapour deposition (CVD) on Cu foil. The CVD process was complemented by plasma enhancement to grow also vertically aligned multiwalled carbon nanotubes using Ni nanoparticles as catalyst. The obtained samples were characterized by Raman spectroscopy analysis. Nature of defects in the samples and optimal growth conditions leading to achieve high quality of graphene and carbon nanotubes are discussed.en_US
dc.language.isoen_USen_US
dc.titleChemical vapour deposition growth and Raman characterization of graphene layers and carbon nanotubesen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1088/1742-6596/682/1/012009en_US
dc.identifier.journalINERA CONFERENCE 2015: LIGHT IN NANOSCIENCE AND NANOTECHNOLOGY (LNN 2015)en_US
dc.citation.volume682en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000372173400009en_US
dc.citation.woscount3en_US
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