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學術出版;;Publications
會議論文;;Conferences Paper
The Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memory
The Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memory
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Date
2014
Authors
Chang, Yao-Feng
Fowler, Burt
Chen, Ying-Chen
Ji, Li
Zhou, Fei
Lee, Jack C.
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https://ir.lib.nycu.edu.tw/handle/11536/136488
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