The Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memory

標題:	The Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memory
作者:	Chang, Yao-Feng Fowler, Burt Chen, Ying-Chen Ji, Li Zhou, Fei Lee, Jack C. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2014
URI:	http://hdl.handle.net/11536/136488
ISBN:	978-1-4799-5406-3
ISSN:	1548-3770
期刊:	2014 72ND ANNUAL DEVICE RESEARCH CONFERENCE (DRC)
起始頁:	165
結束頁:	+
顯示於類別：	會議論文