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dc.contributor.authorTsai, MJen_US
dc.contributor.authorMeng, HFen_US
dc.date.accessioned2014-12-08T15:19:02Z-
dc.date.available2014-12-08T15:19:02Z-
dc.date.issued2005-06-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1913800en_US
dc.identifier.urihttp://hdl.handle.net/11536/13673-
dc.description.abstractThis work presents the effects of electron traps in organic light-emitting diodes using a model which includes charge injection, transport, and recombination. For electron-only devices, the electron current is reduced by the traps for several orders of magnitude at fixed voltage, and the traps strongly increase the transient time. For bipolar devices, due to negative trapped charges, traps enhance the hole current and the total current, opposite to the electron-only devices. The traps also make the recombination region close to the cathode. There is a voltage-dependent critical trap density beyond which the quantum efficiency decreases and transient time rises dramatically. The quantum efficiency is doubled if the hole traps are added to balance the electron and hole injections. Finally, the trap effect can be used in a bilayer light-emitting diode to make the emission color-tunable. (C) 2005 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleElectron traps in organic light-emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.1913800en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume97en_US
dc.citation.issue11en_US
dc.citation.epageen_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000229804700123-
dc.citation.woscount15-
Appears in Collections:Articles


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