Temperature Dependence of Ionization Rates in Ge

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	戴寶通	zh_TW
dc.contributor.author	張俊彥	zh_TW
dc.contributor.author	B.T.Dai	en_US
dc.contributor.author	C.Y.Chang	en_US
dc.date.accessioned	2017-10-06T06:18:01Z	-
dc.date.available	2017-10-06T06:18:01Z	-
dc.date.issued	1971-04	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137463	-
dc.description.abstract	The ionization rates of eletron and hole in germanium have been measured from 200°K to 300°K and were fit to the modified Baraff theory, in which the optical phononmean free path is temperature dependent and can be fit to the formula:λ=λ0 tanhEp/2KT, where Ep is the average optical phonon energy. The asymptotic optical phonon mean free paths wherin deduced from experiments are λ=73±4Å and λoh=84±4Å for electron and hole respectively which are in good agreement with that of Miller's data obtained at room temperature. A simplified approach to calculate the ionization rates from the photomultiplication data has also been deduced for the one sided abrupt junction.	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	Temperature Dependence of Ionization Rates in Ge	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交大學刊	zh_TW
dc.identifier.journal	SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY	en_US
dc.citation.volume	5	en_US
dc.citation.issue	1	en_US
dc.citation.spage	77	en_US
dc.citation.epage	82	en_US
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