On the Structural Properties of Flash-Evaporated Thin Film GaAs with the Presense of Tin Vapor During Growth

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DC 欄位	值	語言
dc.contributor.author	胡定華	zh_TW
dc.contributor.author	D.H.Hu	en_US
dc.date.accessioned	2017-10-06T06:18:02Z	-
dc.date.available	2017-10-06T06:18:02Z	-
dc.date.issued	1972-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137476	-
dc.description.abstract	Structural analysis of x-ray diffraction peaks for flash-evaporated GaAs thin films has shown that the crystalline size is enhanced by the presence of tin vapor pressure during growth. This phenomenon can be related to the regrown process as the tin moves from the bulk to the outer growth surface. The forcing mechanism for tin movement is a temperature gradient.	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	On the Structural Properties of Flash-Evaporated Thin Film GaAs with the Presense of Tin Vapor During Growth	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交大學刊	zh_TW
dc.identifier.journal	SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY	en_US
dc.citation.volume	5	en_US
dc.citation.issue	2	en_US
dc.citation.spage	52	en_US
dc.citation.epage	59	en_US
顯示於類別：	交大學刊

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