Large-Signal Analysis of BARITT Diodes

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DC 欄位	值	語言
dc.contributor.author	褚冀良	zh_TW
dc.contributor.author	施敏	zh_TW
dc.contributor.author	J.L.Chu	en_US
dc.contributor.author	S.M.Sze	en_US
dc.date.accessioned	2017-10-06T06:18:03Z	-
dc.date.available	2017-10-06T06:18:03Z	-
dc.date.issued	1973-02	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137486	-
dc.description.abstract	Large-signal properties of p+νnp and associated BARITT (Barrier Injection Transit Time)diodes are analyzed. An accurate computer program(Sempak) is used which considers the space-charge balance, dependence of carrier mobilities on impurity concentration and electric field, and carrier generation and recombination. The static properties of BARITT diodes are also considered. General expressions for the flat-band voltage and the differential reactance are obtained. The results show that the p+νnp structure is the best choice which gives optimum performances both in static and microwave characteristics.	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	Large-Signal Analysis of BARITT Diodes	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交大學刊	zh_TW
dc.identifier.journal	SCIENCE BULLETIN NATIONAL CHIAO-TUNG UNIVERSITY	en_US
dc.citation.volume	6	en_US
dc.citation.issue	1	en_US
dc.citation.spage	43	en_US
dc.citation.epage	52	en_US
顯示於類別：	交大學刊

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