標題: Reoxidation behavior of high-nitrogen oxynitride films after O(2) and N(2)O treatment
作者: Lin, BC
Chang, KM
Lai, CH
Hsieh, KY
Yao, JM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-May-2005
摘要: Reoxidation of a high-nitrogen ultrathin oxynitride (similar to 1.3nm) has been studied. The reoxidation is conducted using an alternation of nitrous oxide and oxygen gas in rapid thermal oxidation (RTO). The new finding in this study is the zig-zag characteristic of the oxidation rate by O(2) and N(2)O. It is clear that the N(2)O oxidation rate is almost independent of the concentration of nitrogen in oxynitride through out the rapid thermal oxidation process, but the O2 oxidation rate is not.
URI: http://dx.doi.org/10.1143/JJAP.44.2993
http://hdl.handle.net/11536/13750
ISSN: 0021-4922
DOI: 10.1143/JJAP.44.2993
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS
Volume: 44
Issue: 5A
起始頁: 2993
結束頁: 2994
Appears in Collections:Articles