標題: | Reoxidation behavior of high-nitrogen oxynitride films after O(2) and N(2)O treatment |
作者: | Lin, BC Chang, KM Lai, CH Hsieh, KY Yao, JM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-May-2005 |
摘要: | Reoxidation of a high-nitrogen ultrathin oxynitride (similar to 1.3nm) has been studied. The reoxidation is conducted using an alternation of nitrous oxide and oxygen gas in rapid thermal oxidation (RTO). The new finding in this study is the zig-zag characteristic of the oxidation rate by O(2) and N(2)O. It is clear that the N(2)O oxidation rate is almost independent of the concentration of nitrogen in oxynitride through out the rapid thermal oxidation process, but the O2 oxidation rate is not. |
URI: | http://dx.doi.org/10.1143/JJAP.44.2993 http://hdl.handle.net/11536/13750 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.44.2993 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS |
Volume: | 44 |
Issue: | 5A |
起始頁: | 2993 |
結束頁: | 2994 |
Appears in Collections: | Articles |