場效應電晶體負電阻理論之商榷

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DC Field	Value	Language
dc.contributor.author	莊晴光	zh_TW
dc.contributor.author	蔡中	zh_TW
dc.contributor.author	Ching-Kuang Tzuan	en_US
dc.contributor.author	Chun Tsai	en_US
dc.date.accessioned	2017-10-06T06:22:48Z	-
dc.date.available	2017-10-06T06:22:48Z	-
dc.date.issued	1976-12	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137585	-
dc.description.abstract	A theory of negative differential resistance proposed originally for JFET is extended and discussed for the results for MISFET devices to determine both peak point and valley point in the I-V curves.	en_US
dc.language.iso	en_US	en_US
dc.title	場效應電晶體負電阻理論之商榷	zh_TW
dc.title	Comments on the Theory of Negative Resistance of FET Devices	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交通大學學報	zh_TW
dc.identifier.journal	The Journal of National Chiao Tung University	en_US
dc.citation.volume	2	en_US
dc.citation.spage	263	en_US
dc.citation.epage	266	en_US
Appears in Collections:	The Journal of National Chiao Tung University

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