鍗化錮之準靜態變動特性

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	蔡中川	zh_TW
dc.contributor.author	C.Tsai	en_US
dc.date.accessioned	2017-10-06T06:22:52Z	-
dc.date.available	2017-10-06T06:22:52Z	-
dc.date.issued	1976-04	en_US
dc.identifier.uri	http://hdl.handle.net/11536/137610	-
dc.description.abstract	The I-V characteristics of over 150 bulk InSb single crystals at 78°K have been measured. These samples 1mm1mm in cross section and 0.4 to 13 mm in length, are of either the p- or n- type with carrier concentration ranging from 2.510^13 to 2.1*10^16 /cm^3. These multi-valued I-V characteristics were found to be highly non-linear, with as much as four distinct regions each of which can be attributed to a different transport mechanism. Furthermore, these characteristics were found to be dependent not only on the carrier type and doping density of the sample but also on the contact material (In or Sn) used. A theoretical explanation of the observed behavior will be presented.	en_US
dc.language.iso	en_US	en_US
dc.publisher	交大學刊編輯委員會	zh_TW
dc.title	鍗化錮之準靜態變動特性	zh_TW
dc.title	Quasi-Static Transport Characteristics of Indium Antimonide	en_US
dc.type	Campus Publications	en_US
dc.identifier.journal	交通大學學報	zh_TW
dc.identifier.journal	The Journal of National Chiao Tung University	en_US
dc.citation.volume	1	en_US
dc.citation.spage	103	en_US
dc.citation.epage	122	en_US
顯示於類別：	交通大學學報

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