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dc.contributor.authorChin, CCen_US
dc.contributor.authorLin, RJen_US
dc.contributor.authorYu, YCen_US
dc.contributor.authorWang, CWen_US
dc.contributor.authorLin, EKen_US
dc.contributor.authorTsai, WCen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:02:44Z-
dc.date.available2014-12-08T15:02:44Z-
dc.date.issued1996-04-01en_US
dc.identifier.issn0921-4534en_US
dc.identifier.urihttp://hdl.handle.net/11536/1376-
dc.description.abstractWe have studied the stoichiometry of cerium oxide films deposited by RF sputtering as a function of deposition conditions using the resonant Rutherford backscattering method. We found that some films have an off-stoichiometry of CeOy with y greater than 2.0. Such an off-stoichiometry cannot be due to a mixture of the known phases of bulk cerium oxide samples. Those thin samples may have either cerium vacancies or interstitial oxygen atomic impurities. We have tried to determine the valence of the cerium ions by measuring the X-ray photoemission.en_US
dc.language.isoen_USen_US
dc.titleOn the off stoichiometry of cerium oxide thin films deposited by RF sputteringen_US
dc.typeArticleen_US
dc.identifier.journalPHYSICA Cen_US
dc.citation.volume260en_US
dc.citation.issue1-2en_US
dc.citation.spage86en_US
dc.citation.epage92en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996UH47800012-
dc.citation.woscount9-
Appears in Collections:Articles


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