On the off stoichiometry of cerium oxide thin films deposited by RF sputtering

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DC 欄位	值	語言
dc.contributor.author	Chin, CC	en_US
dc.contributor.author	Lin, RJ	en_US
dc.contributor.author	Yu, YC	en_US
dc.contributor.author	Wang, CW	en_US
dc.contributor.author	Lin, EK	en_US
dc.contributor.author	Tsai, WC	en_US
dc.contributor.author	Tseng, TY	en_US
dc.date.accessioned	2014-12-08T15:02:44Z	-
dc.date.available	2014-12-08T15:02:44Z	-
dc.date.issued	1996-04-01	en_US
dc.identifier.issn	0921-4534	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1376	-
dc.description.abstract	We have studied the stoichiometry of cerium oxide films deposited by RF sputtering as a function of deposition conditions using the resonant Rutherford backscattering method. We found that some films have an off-stoichiometry of CeOy with y greater than 2.0. Such an off-stoichiometry cannot be due to a mixture of the known phases of bulk cerium oxide samples. Those thin samples may have either cerium vacancies or interstitial oxygen atomic impurities. We have tried to determine the valence of the cerium ions by measuring the X-ray photoemission.	en_US
dc.language.iso	en_US	en_US
dc.title	On the off stoichiometry of cerium oxide thin films deposited by RF sputtering	en_US
dc.type	Article	en_US
dc.identifier.journal	PHYSICA C	en_US
dc.citation.volume	260	en_US
dc.citation.issue	1-2	en_US
dc.citation.spage	86	en_US
dc.citation.epage	92	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1996UH47800012	-
dc.citation.woscount	9	-
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