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dc.contributor.authorLiu, PCen_US
dc.contributor.authorHou, CYen_US
dc.contributor.authorWu, YCSen_US
dc.date.accessioned2014-12-08T15:19:18Z-
dc.date.available2014-12-08T15:19:18Z-
dc.date.issued2005-05-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2004.11.070en_US
dc.identifier.urihttp://hdl.handle.net/11536/13785-
dc.description.abstractA direct wafer-bonding technique has been used to fabricate high-brightness light emitting diodes (LEDs). However, bonding processes were usually performed at elevated temperatures, possibly causing degradation in the quality of the LED structure. In addition to this, misorientation between the two bonded wafers may have caused defects between the wafers. In this study, these two problems were solved by bonding the InGaP/GaAs and GaAs wafers with an indium tin oxide (ITO) polycrystalline film at temperatures below 650 degrees C. It was found that the bonding occurred mainly through the In transport from the InGaP to ITO, and that the electrical resistance decreased with the bonding temperature. (c) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectwafer bondingen_US
dc.subjectlight-emitting diodesen_US
dc.subjectLEDsen_US
dc.subjectindium tin oxideen_US
dc.subjectelectrical resistanceen_US
dc.titleWafer bonding for high-brightness light-emitting diodes via indium tin oxide intermediate layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2004.11.070en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume478en_US
dc.citation.issue1-2en_US
dc.citation.spage280en_US
dc.citation.epage285en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000228039800047-
dc.citation.woscount8-
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