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dc.contributor.authorShew, BYen_US
dc.contributor.authorLi, HCen_US
dc.contributor.authorPan, CLen_US
dc.contributor.authorKo, CHen_US
dc.date.accessioned2014-12-08T15:19:21Z-
dc.date.available2014-12-08T15:19:21Z-
dc.date.issued2005-04-07en_US
dc.identifier.issn0022-3727en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0022-3727/38/7/020en_US
dc.identifier.urihttp://hdl.handle.net/11536/13824-
dc.description.abstractDeep x-ray lithography (DXL) was used to fabricate two-dimensional photonic crystals (PCs) for a terahertz high-pass filter. Instead of the conventional poly(methyl rnethacrylate) resist, high-sensitivity SU-8 resist was used to pattern the ultra-deep (1 mm), and high aspect ratio (> 30) PC structures. In this study, an x-ray mask with thick Si membrane was used in the DXL process owing to the high-sensitivity nature of SU-8. The robust mask structure can significantly improve the fabrication yield of the conventional x-ray mask with a very thin (< 2 mu m) membrane. Preliminary results demonstrate that SU-8 has poor pattern definition after DXL process, probably due to its high sensitivity. This phenomenon can be eliminated by dissolving oxygen into the resist to 'quench' the excessive photochemical reaction. Thanks to the high adhesion property of SU-8, the sticking problem of the high aspect ratio crystals is easily solved with natural drying by reducing the unbalanced capillary force. After optimizing all the processes. the proposed DXL SU-8 technique successively fabricated the terahertz crystals with high efficiency, high precision 1(< 1 mu m) and high surface quality (R(a) similar to 12 nm). The resist pillars were then deposited with a 300 nm thick gold layer for subsequent terahertz, measurement. The measurement results show that the PC structure acts as a high-pass filter in the terahertz, range. agreeing with the simulation results.en_US
dc.language.isoen_USen_US
dc.titleX-ray micromachining SU-8 resist for a terahertz photonic filteren_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0022-3727/38/7/020en_US
dc.identifier.journalJOURNAL OF PHYSICS D-APPLIED PHYSICSen_US
dc.citation.volume38en_US
dc.citation.issue7en_US
dc.citation.spage1097en_US
dc.citation.epage1103en_US
dc.contributor.department機械工程學系zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Mechanical Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000228679900021-
dc.citation.woscount15-
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