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Quantum mechanical corrected simulation program with integrated circuit emphasis model for simulation of ultrathin oxide metal-oxide-semiconductor field effect transistor gate tunneling current | 101 |
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Quantum mechanical corrected simulation program with integrated circuit emphasis model for simulation of ultrathin oxide metal-oxide-semiconductor field effect transistor gate tunneling current | 0 | 1 | 0 | 0 | 0 | 0 | 0 |
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