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dc.contributor.authorKwei, CMen_US
dc.contributor.authorTu, YHen_US
dc.contributor.authorTung, CJen_US
dc.date.accessioned2014-12-08T15:19:28Z-
dc.date.available2014-12-08T15:19:28Z-
dc.date.issued2005-04-01en_US
dc.identifier.issn0168-583Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.nimb.2004.12.029en_US
dc.identifier.urihttp://hdl.handle.net/11536/13866-
dc.description.abstractIn the rapid development of mesoscopic science, the study of surface excitations in solids and overlayer systems plays a crucial role. The surface excitation parameter which describes the total probability of surface plasmon excitations by an electron traveling in vacuum before impinging on or after escaping from a semiconducting III-V compound has been calculated for 200-2000 eV electrons crossing the compound surface. These calculations were performed using the dielectric response theory with sum-rule -constrained extended Drude dielectric functions established by the fits of these functions to optical data. Surface excitation parameters calculated for InSb, InAs, Gap, GaSb or GaAs III-V compounds were found to follow to a simple formula, i.e. P-s = aE(-b), where Ps is the surface excitation parameter and E is the electron energy. These surface excitation parameters were then applied to determine the elastic reflection coefficient for electrons elastically backscattered from III-V compounds using the Monte Carlo simulations. Good agreement was found for the electron elastic reflection coefficient between calculated results and experimental data. (c) 2004 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectdielectric functionen_US
dc.subjectsurface excitation parameteren_US
dc.subjectreflection coefficienten_US
dc.titleSurface excitation parameter for semiconducting III-V compoundsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.nimb.2004.12.029en_US
dc.identifier.journalNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMSen_US
dc.citation.volume230en_US
dc.citation.issueen_US
dc.citation.spage125en_US
dc.citation.epage128en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000228126500024-
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