標題: | Surface excitation parameter for electrons crossing the A1N surface |
作者: | Kwei, C. M. Tu, Y. H. Tung, C. J. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | electron;surface excitation parameter;dielectric function;A1N |
公開日期: | 29-十月-2007 |
摘要: | Fast electrons crossing a solid surface induce surface excitations. The total probability of such excitations for electrons moving outside the solid, i.e. in vacuum, is characterized by the surface excitation parameter (SEP). In the present work, the SEP was calculated for either incident or escaping electrons with normal or glancing crossing angles over the surface of aluminum nitride (AlN), a wide-band-gap semiconductor. These calculations were performed based on the dielectric response theory using the sum-rule-constrained extended Drude dielectric function with parameters obtained from a fit of this function to experimental optical data and electron energy-loss data. Dependences of the SEP on electron energy and crossing angle were analyzed. A simple formula was proposed for the fitting of SEP as a function of electron energy and crossing angle. (C) 2007 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.vacuum.2007.07.028 http://hdl.handle.net/11536/3908 |
ISSN: | 0042-207X |
DOI: | 10.1016/j.vacuum.2007.07.028 |
期刊: | VACUUM |
Volume: | 82 |
Issue: | 2 |
起始頁: | 197 |
結束頁: | 200 |
顯示於類別: | 會議論文 |