寬頻pHEMT低雜訊放大器之最佳化設計與 2.4GHz雙模態功率放大器

Abstract

本篇論文主要分為兩個主題，包含了寬頻低雜訊放大器之最佳化設計及2.4GHz雙模態功率放大器之探討。 第一部分以雜訊轉換矩陣[11]快速的推導出寬頻低雜訊放大器的雜訊參數並利用模擬的方式來探討柴比雪夫濾波器及非理想被動元件對LNA特性的影響，整理出一套最佳化設計流程，最後，我們用 pHEMT 製程設計出三顆晶片來應證結論。 第二部分簡單的介紹功率放大器的原理及特性並說明設計的方法及流程。因為功率放大器與其他發送機原件相比之下功率消耗高、效率低的原因，我們用電晶體面積縮小及阻抗調整的方式來切換高/低功率雙模態，以提升低功率輸出時的效率，最後，在TSMC SiGe BiCMOS製程中實現它。

This thesis consists of two parts, including design optimization of wide-band low noise amplifiers and 2.4GHz dual-mode power amplifiers. First, the noise parameters of a wide-band low noise amplifier can be quickly derived using noise transformation matrix [11]. The effects of Chebyshev filters and non-ideal passive components have been analyzed through simulations. Moreover, we then present an optimized design flow and demonstrate three LNAs using pHEMT technology. Second, the principles and characteristics of power amplifiers are introduced to explain the design methods of power amplifiers. Because a power amplifier has characteristics of high power consumption and low efficiency when compared with the other parts in a transceiver, we enhance the efficiency using a high/low power mode control, including the methods of physical–size reduction and impedance adjustment. A high/low mode power amplifier in TSMC SiGe BiCMOS technology is thus demonstrated.