氧化鉿電阻式記憶體特性之研究

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	林冠佑	zh_TW
dc.contributor.author	鄭晃忠	zh_TW
dc.contributor.author	Lin, Kuan-Yu	en_US
dc.contributor.author	Cheng, Huang-Chung	en_US
dc.date.accessioned	2018-01-24T07:37:53Z	-
dc.date.available	2018-01-24T07:37:53Z	-
dc.date.issued	2016	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070350126	en_US
dc.identifier.uri	http://hdl.handle.net/11536/139312	-
dc.language.iso	en_US	en_US
dc.subject	電阻式記憶體	zh_TW
dc.subject	爐管退火	zh_TW
dc.subject	快速金屬退火	zh_TW
dc.subject	氧化鉿	zh_TW
dc.subject	電場增強效應	zh_TW
dc.subject	低操作電壓	zh_TW
dc.subject	RRAM	en_US
dc.subject	Furnace annealing	en_US
dc.subject	Rapid thermal annealing	en_US
dc.subject	Hafnium oxide	en_US
dc.subject	Field-enhanced effect	en_US
dc.subject	Low operation voltages	en_US
dc.title	氧化鉿電阻式記憶體特性之研究	zh_TW
dc.title	Study on the Resistive Switching Characteristics of the Hafnium Oxide-Based Resistive Random Access Memory (RRAM) Devices	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
顯示於類別：	畢業論文